Non-volatile memory device, computing system and wordline...

Details Non-volatile memory device, computing system and wordline... Non-volatile memory device, computing system and wordline...

2009-04-30

2011-10-18

Nguyen, Tuan (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185250, C365S185180, C365S189090

Reexamination Certificate

active

08040736

ABSTRACT:
A nonvolatile memory device including a memory cell; a word line coupled to the memory cell; a drive line; a switch coupled between the word line and the drive line, and configured to electrically connect the word line and the drive line; and a voltage generator coupled to the drive line and configured to charge the drive line to a precharge voltage. The precharge voltage is higher than a bias voltage applied to the word line during a corresponding operation on the memory cell.

REFERENCES:
patent: 7692977 (2010-04-01), Kim et al.
patent: 2007/0140036 (2007-06-01), Noguchi et al.
patent: 10-201222 (1998-07-01), None
patent: 10-2006-0030652 (2006-04-01), None
patent: 10-2006-0034994 (2006-04-01), None
patent: 10-2007-0054008 (2007-05-01), None
English language abstract of Japanese Publication No. 10-201222.
English language abstract of Korean Publication No. 10-2006-0030652.
English language abstract of Korean Publication No. 10-2006-0034994.
English language abstract of Korean Publication No. 10-2007-0054008.

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