Non-volatile memory device capable of changing increment of...

Details Non-volatile memory device capable of changing increment of... Non-volatile memory device capable of changing increment of...

2006-05-02

2006-05-02

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185190, C365S185180

Reexamination Certificate

active

07038949

ABSTRACT:
A non-volatile memory device includes a word line voltage generator circuit for generating a word line voltage to be supplied to a selected row in response to step control signals and a program controller for sequentially activating the step control signals during a program cycle. During the program cycle, the word line voltage generator circuit controls the increment of the word line voltage differently according to the mode of operation, namely, a test mode or a normal mode. Thus test time can be shortened.

REFERENCES:
patent: 5642309 (1997-06-01), Kim
patent: 6707716 (2004-03-01), Natori
patent: 6804150 (2004-10-01), Park et al.
patent: 10-083687 (1998-03-01), None
patent: 1020020039744 (2002-05-01), None
English language abstract of Japanese Publication No. 10-083687.
English language abstract of Korean Pulbication No. 1020020039744.

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