Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2009-07-27
2011-11-08
Tran, Michael (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185240
Reexamination Certificate
active
08054682
ABSTRACT:
A non-volatile memory device includes a cell array including a plurality of memory cells, a page buffer block controlling bitlines of the plurality of memory cells to program the memory cells to a first target state or a second target state, and a control logic configured to skip a verify operation for the memory cells programmed to the first target state and perform a verify operation for the memory cells programmed to the second target state during a second program loop when the memory cells programmed to the first target state are determined to be in a pass condition during a first program loop.
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Baek Jong-Nam
Hwang Sang-won
Kang Kyung-Min
Onello & Mello LLP
Samsung Electronics Co,. Ltd.
Tran Michael
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