Non-volatile memory device and method of reading data therefrom

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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Details

C365S189040, C365S100000, C365S230060, C365S175000, C365S115000

Reexamination Certificate

active

07835174

ABSTRACT:
The present invention provides a method of reading data from a non-volatile memory device including word lines and bit lines that intersect each other and electrically rewritable memory cells that are arranged at intersections of the word lines and the bit lines and that respectively have variable resistive elements nonvolatily storing a resistances as data. The method includes: precharging a selected word line and unselected word lines to a first word line voltage and a selected bit line and unselected bit lines to a first bit line voltage; and reading data from a memory cell connected to the selected word line and the selected bit line by changing the voltage of the selected word line from the first word line voltage to a second word line voltage and changing the voltage of the selected bit line from the first bit line voltage to a second bit line voltage after the precharging.

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patent: 2006/0023497 (2006-02-01), Kawazoe et al.
patent: 2007/0091665 (2007-04-01), Oh et al.
patent: 2007/0211544 (2007-09-01), Takemura
patent: 2006-66052 (2006-03-01), None
U.S. Appl. No. 12/123,827, filed May 20, 2008, Takuya Futatsuyama, et al.
U.S. Appl. No. 12/118,064, filed May 9, 2008, Toshiaki Edahiro, et al.
U.S. Appl. No. 12/132,972, filed Jun. 4, 2008, Naoya Tokiwa, et al.
Y. Hosoi, et al., “High Speed Unipolar Switching Resistance RAM (RRAM) Technology”, IEEE International Electron Device meeting, Tech. digest, 2006, 4 pages.

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