Non-volatile memory device and method of operating the same

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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Details

C365S185170, C365S185230, C365S185280

Reexamination Certificate

active

08040733

ABSTRACT:
A non-volatile memory device includes first and second strings memory cell transistors, related first and second word lines respectively connected to gates of the first string memory cell transistors, wherein respective first and second word lines are connected to commonly receive a bias voltage. The non-volatile memory device also includes dummy cell transistors connected to the first and second strings, and first and second dummy word lines configured to receive different bias voltages.

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