Non-volatile memory device and method of manufacturing the same

Details Non-volatile memory device and method of manufacturing the same Non-volatile memory device and method of manufacturing the same

2007-05-17

2009-06-30

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257SE21209, C257SE21682, C257SE29129, C438S201000, C438S257000

Reexamination Certificate

active

07554150

ABSTRACT:
A non-volatile memory device includes isolation layers, a cell trench, a floating gate, a common source region and a word line. The isolation layers define an active region of a substrate. The cell trench is formed in the active region. The cell trench extends in a first direction. The floating gate is formed on the active region and in the cell trench. The common source region is formed on the active region adjacent a second side face of the floating gate and extends in a second direction substantially perpendicular to the first direction. The word line is formed on the active region, which is adjacent to a first side face of the floating gate opposite to the second side face, and the isolation layers and in the cell trench. The word line extends in the second direction.

REFERENCES:
patent: 2004/0075134 (2004-04-01), Lin et al.
patent: 2004/0077147 (2004-04-01), Lin
patent: 2004/0171218 (2004-09-01), Kim et al.
patent: 2004/0207005 (2004-10-01), Kim et al.
patent: 2006/0099756 (2006-05-01), Kwon
patent: 2003-78207 (2003-10-01), None
patent: 1020050055538 (2005-06-01), None
patent: 1020060012982 (2006-02-01), None

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