Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-21
2007-08-21
Dang, Trung (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S259000, C438S283000, C438S284000, C257SE29112, C257SE29129, C257SE29130
Reexamination Certificate
active
11073134
ABSTRACT:
A non-volatile memory device includes a fin body protruded from a semiconductor substrate. The fin body has first and second side surfaces opposite to each other. An inner dielectric layer pattern is formed on an upper surface, and the first and second side surfaces of the fin body. A floating gate electrode is formed on the inner dielectric layer pattern. The floating gate electrode has an uneven upper surface. An outer dielectric layer is formed on the floating gate electrode. A control gate electrode is formed on the outer dielectric layer.
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English language abstract of Korean Publication No. 2001-0003086.
Kim Tae-Yong
Lee Choong-Ho
Park Dong-Gun
Yoon Jae-Man
Dang Trung
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd
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