Non-volatile memory device and method of fabricating the same

Details Non-volatile memory device and method of fabricating the same Non-volatile memory device and method of fabricating the same

2007-04-12

2010-10-12

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular signal path connections

C257S209000, C257S390000, C438S287000

Reexamination Certificate

active

07812375

ABSTRACT:
In the non-volatile memory device, a first isolation layer is formed to have a plurality of depressions each having a predetermined depth from an upper surface of the semiconductor substrate. A fin type first active region is defined by the first isolation layer and has one or more inflected portions at its sidewalls exposed from the first isolation layer, where the first active region is divided into an upper part and a lower part by the inflected portions and a width of the upper part is narrower than that of the lower part. A tunneling insulation layer is formed on the first active region. A storage node layer is formed on the tunneling insulation layer. Also, a blocking insulation layer is formed on the storage node layer, and a control gate electrode is formed on the blocking insulation layer.

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