Non-volatile memory device and method for writing data thereto

Static information storage and retrieval – Read/write circuit – Common read and write circuit

Reexamination Certificate

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Details

C365S189150, C365S100000, C365S148000, C365S207000, C365S208000

Reexamination Certificate

active

08000155

ABSTRACT:
The present invention provides a method for writing data to a non-volatile memory device having first wirings and second wirings intersecting one another and memory cells arranged at each intersection therebetween, each of the memory cells having a variable resistive element and a rectifying element connected in series. According to the method, the second wirings are charged to a certain voltage not less than a rectifying-element threshold value, prior to a rise in a selected first wiring. Then, a selected first wiring is charged to a voltage required for writing or erasing, after which a selected second wiring is discharged.

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