Non-volatile memory device and fabricating method thereof

Details Non-volatile memory device and fabricating method thereof Non-volatile memory device and fabricating method thereof

2005-10-12

2010-02-16

Quach, Tuan N. (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S321000, C257SE29129, C257SE29309

Reexamination Certificate

active

07663177

ABSTRACT:
A non-volatile memory device and fabricating method thereof are provided. In the deposition to form a tunneling dielectric layer, a composite charge trapping layer and a block dielectric layer, an ingredient of a depositing material or the depositing material is adjusted to form a grading energy level structure, such that carriers are trapped or erased more easily in accordance with a variation in grading energy level. Therefore, the carriers are stored more effectively and the probability that the electric leakage occurs is reduced substantially.

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