Non-volatile memory device and erase method of the same

Details Non-volatile memory device and erase method of the same Non-volatile memory device and erase method of the same

2007-09-18

2007-09-18

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185240, C365S185270, C365S185290

Reexamination Certificate

active

11060915

ABSTRACT:
An erase method of a non-volatile memory device including memory cells arranged in a matrix of rows and columns. The memory cells are erased at the same time. An erase-verify operation is performed for the erased memory cells. The erase method is repeated under different bias conditions of the rows. An erase-verify operation is successively performed twice or more under different bias conditions of wordlines to decrease cell current caused by a weak cell which may be produced in a process. Thus, a reliability of an erase-verify operation is enhance to increase a yield.

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English language abstract of Korean Publication No. 2001-3657.
English language abstract of Korean Publication No. 2001-7106.
Samsung Electronics Co., Ltd., “(NAND) Flash Memory & Smart Media Databook”, Sep. 2003, 2 pp.

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