Non-volatile memory device, and control method therefor

Details Non-volatile memory device, and control method therefor Non-volatile memory device, and control method therefor

2007-10-09

2007-10-09

Graham, Kretelia (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S189110

Reexamination Certificate

active

11215850

ABSTRACT:
During an erase operation, lower decoder groups20(i) and21(i) (i=1 to m) of erase-target sectors are connected, at their respective low voltage power supply terminals (VL), to a first negative voltage supply line (VM) via switches (B) (50and51, respectively) and a negative bias voltage is supplied to local word lines. The first negative voltage supply line (VM) is connected to a level shift circuit (4), and is level-shifted to a voltage at a higher level relative to that of a second negative voltage (VMP) which is output from a negative voltage generator circuit (3) via a second negative voltage supply line (VMP). An upper decoder group (10) is connected, at its low voltage power supply terminal (VL), to the second negative voltage line (VMP) via a switch (A) (5). All global word lines GWL0(i) (i=0 to m) are biased to the second negative voltage (VMP) by an active signal (ACTB0(i)) at high level supplied to the upper decoder group (10) and are biased to a lower voltage level relative to the first negative voltage (VM) as a bias voltage to the local word lines.

REFERENCES:
patent: 6249458 (2001-06-01), Shokouhi et al.
patent: 6483366 (2002-11-01), Ho
patent: 6906967 (2005-06-01), Choi et al.
patent: 7023262 (2006-04-01), Sim et al.
patent: 57-030419 (1982-02-01), None
patent: 06-089574 (1994-03-01), None
patent: 06-168597 (1994-06-01), None
patent: 07-037396 (1995-07-01), None
patent: 2002-074951 (2002-03-01), None
patent: 2003-199329 (2003-07-01), None
patent: 2003-272396 (2003-09-01), None
patent: 2004-103143 (2004-04-01), None

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