Non-volatile memory device, and control method of...

Details Non-volatile memory device, and control method of... Non-volatile memory device, and control method of...

2006-06-30

2008-10-14

Dinh, Son (Department: 2824)

Static information storage and retrieval

Read/write circuit

C365S185200, C365S230060

Reexamination Certificate

active

07436715

ABSTRACT:
In a memory cell array, aside from a normal-data storing region, a control-information storing region is also allocated, and the control-information storing region is composed of a predetermined number of control-information storing memory cells in each bit of control information, and same bit data is stored in the predetermined number of control-information storing memory cells, and the data is read out simultaneously at the time of reading out. When being read-out the control information, since data is read out simultaneously from the predetermined number of memory cells, the driving capacity of reading route when reading out is reinforced. Reading time of control information being read out at the time of turning on the power or initializing after resetting can be shortened, and the operation can be quickly transferred to normal access action.

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