Non-volatile memory device and bad block remapping method

Details Non-volatile memory device and bad block remapping method Non-volatile memory device and bad block remapping method

2009-07-29

2011-11-01

Dinh, Son (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185110, C365S230030

Reexamination Certificate

active

08050093

ABSTRACT:
A non-volatile memory device and a bad block remapping method use some of main blocks as remapping blocks to replace a bad block in a main cell block and selects remapping blocks using existing block address signals. Thus, separate bussing of remapping block address signals is not needed. The bad block remapping includes comparing an external block address input from an external source to a stored bad block address, generating a bad block flag signal when the external block address is identical to the stored bad block address, generating a remapping block address selecting the remapping blocks in response to a remapping address corresponding to the bad block address, selecting one of the external block address and the remapping block address in response to the bad block flag signal to create a selected address, and outputting a row address signal in accordance with the selected address.

REFERENCES:
patent: 5841957 (1998-11-01), Ju et al.
patent: 6625071 (2003-09-01), Ikeda et al.
patent: 6956769 (2005-10-01), Lee
patent: 7434122 (2008-10-01), Jo
patent: 2003-045196 (2003-02-01), None
patent: 10-2003-0072433 (2003-09-01), None
patent: 10-2006-0012696 (2006-02-01), None

Affiliated with

Also associated with

Rating

Non-volatile memory device and bad block remapping method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory device and bad block remapping method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory device and bad block remapping method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4281730