Non-volatile memory device achieving fast data reading by...

Details Non-volatile memory device achieving fast data reading by... Non-volatile memory device achieving fast data reading by...

2005-05-03

2005-05-03

Tran, M. (Department: 2818)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S189070

Reexamination Certificate

active

06888772

ABSTRACT:
Capacitors are provided for changing the voltage level of data lines, respectively, in a data reading operation. A signal line electrically coupled to capacitors is provided. Capacitors charge data lines in accordance with the voltage level of signal line by capacitive coupling. Thus, data lines can be charged quickly to achieve a fast data reading operation.

REFERENCES:
patent: 6724662 (2004-04-01), Manea
patent: 6803821 (2004-10-01), DeFalco et al.
Roy Scheuerlein et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell”, IEEE ISSCC Digest of Technical Papers, TA7.2, 2000.
M. Durlam et al., “Nonvolatile RAM based on Magnetic Tunnel Junction Elements”, IEEE ISSCC Digest of Technical Papers, TA7.3, 2000.
Peter K. Naji et al., “A 256kb 3.0 1T1MTJ Nonvolatile Magnetoresistive RAM”, IEEE ISSCC Digest of Technical Papers, TA7.6, 2001.
“Forefront of Non-Volatile Memory/The Future in Intel's Mind: From Flash Memory to OUM”, Nikkei Microdevices, Mar., 2002, pp. 65-78 (Partial English Translation).

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