Non-volatile memory device

Details Non-volatile memory device Non-volatile memory device

2010-07-27

2011-11-15

Sofocleous, Alexander (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C257S314000, C257S319000, C365S185180, C365S185290

Reexamination Certificate

active

08059473

ABSTRACT:
A non-volatile memory device includes a floating gate formed on a substrate with a gate insulation layer interposed therebetween, a tunnel insulation layer formed on the floating gate, a select gate electrode inducing charge introduction through the gate insulation layer, and a control gate electrode inducing charge tunneling occurring through the tunnel insulation layer. The select gate electrode is insulated from the control gate electrode. According to the non-volatile memory device, a select gate electrode and a control gate electrode are formed on a floating gate, and thus a voltage is applied to the respective gate electrodes to write and erase data.

REFERENCES:
patent: 5394360 (1995-02-01), Fukumoto
patent: 5422504 (1995-06-01), Chang et al.
patent: 5910912 (1999-06-01), Hsu et al.
patent: 6525369 (2003-02-01), Wu
patent: 6562673 (2003-05-01), Lin
patent: 6635533 (2003-10-01), Chang et al.
patent: 6787418 (2004-09-01), Chu et al.
patent: 6876031 (2005-04-01), Kao et al.
patent: 7265411 (2007-09-01), Kang
patent: 7315056 (2008-01-01), Klinger et al.
patent: 2003/0198086 (2003-10-01), Shukuri
patent: 01248670 (1989-10-01), None
patent: 2001085544 (2001-03-01), None
patent: 10-2002-0044702 (2002-06-01), None
patent: 10-2002-0014275 (2008-07-01), None

Affiliated with

Also associated with

Rating

Non-volatile memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4267479