Non-volatile memory device

Details Non-volatile memory device Non-volatile memory device

2008-06-04

2010-10-19

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000, C365S189050

Reexamination Certificate

active

07817457

ABSTRACT:
According to one embodiment, a nonvolatile memory device includes: a memory cell array including memory cells each having a variable resistance element for nonvolatilely storing data identified by an electrically rewritable resistance value; a first data latch storing write and erase data to be written on a given group of memory cells of the memory cell array for a write and erase operation; and a second data latch storing reference data for performing a compensation operation of the given group to compensate write and erase disturbance accompanied by the write or erase operation.

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U.S. Appl. No. 12/266,884, filed Nov. 7, 2008, Tokiwa.
U.S. Appl. No. 12/394,487, filed Feb. 27, 2009, Tokiwa, et al.
Y. Hosoi, et al., “High Speed Unipolar Switching Resistance RAM (RRAM) Technology”, Technical Digest, IEEE International Electron Devices Meeting 2006, 4 pages.

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