Non-volatile memory device

Details Non-volatile memory device Non-volatile memory device

2006-12-06

2009-08-11

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000, C257S321000, C257S330000, C257SE21209, C257SE21419

Reexamination Certificate

active

07573089

ABSTRACT:
Non-volatile memory devices and a method of manufacturing the same, wherein data storage of two bits per cell is enabled and the devices can pass the limit in terms of layout, whereby channel length can be controlled. The non-volatile memory device includes gate lines formed in one direction on a semiconductor substrate in which trenches are formed, wherein the gate lines gap-fill the trenches, a dielectric layer formed between the semiconductor substrate and the gate lines, bit separation insulating layers formed between the semiconductor substrate and the dielectric layer under the trenches, and isolation structures formed by etching the trenches, and the dielectric layer and the semiconductor substrate between the trenches in a line form vertical to the gate lines and gap-filling an insulating layer.

REFERENCES:
patent: 5796141 (1998-08-01), Lin et al.
patent: 6720611 (2004-04-01), Jang
patent: 6743695 (2004-06-01), Lee et al.
patent: 6969686 (2005-11-01), Hsieh et al.
patent: 2004/0245562 (2004-12-01), Hsiao et al.
patent: 2006/0043457 (2006-03-01), Baik
patent: 2006/0127680 (2006-06-01), Tzou et al.
patent: 2006/0216894 (2006-09-01), Parekh et al.
patent: 2007/0077704 (2007-04-01), Nieh
patent: 10-1998-0039618 (1998-08-01), None
patent: 10-1999-0063156 (1999-07-01), None
patent: 10-2001-0020984 (2001-03-01), None

Affiliated with

Also associated with

Rating

Non-volatile memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4135084