Non-volatile memory device

Details Non-volatile memory device Non-volatile memory device

2006-03-14

2006-03-14

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S276000

Reexamination Certificate

active

07012298

ABSTRACT:
A non-volatile memory device is provided by forming a tunnel oxide layer and a gate electrode on the tunnel oxide layer. Silicon structures are formed below the side surfaces of the gate electrode and act as a floating gate electrode for the non-volatile memory device.

REFERENCES:
patent: 5789269 (1998-08-01), Mehta et al.
patent: 5952692 (1999-09-01), Nakazato et al.
patent: 6121654 (2000-09-01), Likharev
patent: 6703298 (2004-03-01), Roizin et al.
patent: 2002/0076877 (2002-06-01), Gupta et al.
Zoran Krivokapic, U.S. App. No. 10/454,517, for “Semiconductor Device Having Conductive Structures Formed Near a Gate Electrode”, filed Jun. 5, 2003.
Peter Van Zant, “Microchip Fabrication, A Practical Guide to Semiconductor Processing”, McGraw Hill, Fourth Edition, p. 529.

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