Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-15
2005-11-15
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S366000
Reexamination Certificate
active
06965145
ABSTRACT:
A non-volatile memory device (hereinafter alternatively referred to device) includes a guiding gate that extends along a first portion of the device's channel length and a control gate that extends along a second portion of the device's channel length. The first and second portions of the channel length do not overlap. The guiding gate, which overlays the substrate above the channel region, is insulated from the semiconductor substrate in which the device is formed via an oxide layer. The control gate, which also overlays the substrate above the channel region, is insulated from the substrate via an oxide-nitride-oxide layer. The device includes a source terminal, a drain terminal, a guiding gate terminal, a control gate terminal, and a substrate terminal coupled to the semiconductor substrate in which the device is formed.
REFERENCES:
patent: 4193128 (1980-03-01), Brewer
patent: 4271487 (1981-06-01), Craycraft et al.
patent: 4462090 (1984-07-01), Iizuka
patent: 5051951 (1991-09-01), Maly et al.
patent: 5396461 (1995-03-01), Fukumoto
patent: 5408115 (1995-04-01), Chang
patent: 5619470 (1997-04-01), Fukumoto
patent: 5646885 (1997-07-01), Matsuo et al.
patent: 5703388 (1997-12-01), Wang et al.
patent: 5851881 (1998-12-01), Lin et al.
patent: 5946566 (1999-08-01), Choi
patent: 5969383 (1999-10-01), Chang et al.
patent: 5986932 (1999-11-01), Ratnakumar et al.
patent: 6091634 (2000-07-01), Wong
patent: 6118157 (2000-09-01), Bergemont
patent: 6175268 (2001-01-01), Merrill
patent: 6222765 (2001-04-01), Nojima
patent: 6242774 (2001-06-01), Sung
patent: 6266272 (2001-07-01), Kirihata et al.
patent: 6285575 (2001-09-01), Miwa
patent: 6363011 (2002-03-01), Hirose et al.
patent: 6370058 (2002-04-01), Fukumoto
patent: 6388293 (2002-05-01), Ogura et al.
patent: 6414873 (2002-07-01), Herdt
patent: 6426894 (2002-07-01), Hirano
patent: 6514819 (2003-02-01), Choi
patent: 6532169 (2003-03-01), Mann et al.
patent: 6556487 (2003-04-01), Ratnakumar et al.
patent: 6654273 (2003-11-01), Miwa et al.
patent: 6798008 (2004-09-01), Choi
patent: 2003/0223288 (2003-12-01), Choi
O2IC, Inc.
Prenty Mark V.
Townsend and Townsend / and Crew LLP
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