Non-volatile memory device

Details Non-volatile memory device Non-volatile memory device

2011-04-12

2011-04-12

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000, C257S324000, C257SE29300, C257SE29129

Reexamination Certificate

active

07923765

ABSTRACT:
A non-volatile memory device includes a memory cell region which is formed on a semiconductor substrate to store predetermined information, and a peripheral circuit region which is formed on the semiconductor substrate. The memory cell region includes a gate electrode; and a charge storage layer, the charge storage layer being formed to be a notch or wedge shape having an edge extending into both sides of a bottom end of the gate electrode. The peripheral circuit region includes no charge storage layer therein.

REFERENCES:
patent: 6927446 (2005-08-01), Yoshino
patent: 7211866 (2007-05-01), Yuan et al
patent: 2003/0178671 (2003-09-01), Takahashi
patent: 2007/0052000 (2007-03-01), Lee
patent: 2007/0221978 (2007-09-01), Tsuji
patent: 2004-343014 (2004-12-01), None
patent: 2007-157874 (2007-06-01), None

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