Non-volatile memory circuits, architecture and methods

Details Non-volatile memory circuits, architecture and methods Non-volatile memory circuits, architecture and methods

1994-01-10

1995-08-08

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Erase

365238, 36523003, 365900, G11C 1300

Patent

active

054405181

ABSTRACT:
The invention enables random read and write operations into cells in an array that contains staggered source or drain connections from the memory cells in a given column. The invention comprises only one row decoder providing the required voltages to the read word lines during reading, programming and erase operations. The invention reduces the effective programming time of a single cell and of an entire row of cells that program using hot electrons.
According to another aspect of the invention the asymmetry in programming of split gate EEPROM is used to reverse bias the cell so a plurality of digital bits that were stored by D/A converter in the cell according to a curve are read out by an A/D converter with large voltage difference between logical states.

REFERENCES:
patent: 4156286 (1979-05-01), Connors et al.
patent: 4368988 (1983-01-01), Tahara et al.
patent: 4627027 (1986-12-01), Rai et al.
patent: 5095344 (1992-03-01), Harari
Intel Corp., 28F256 Data Sheet, Sep. 1988.
Toshiba Corp., TMM28257P Data Sheet, Mar. 1988.
XICOR Inc., X28256 Data Sheet, May 1987.
XICOR Inc., X2004 Data Sheet, May 1987.
XICOR Inc., X2404 Data Sheet, May 1987.
Fujitsu Microelectronics Inc., MBM28C64 Data Sheet--Sep. 1987, Databook 1990.
National Semiconductor, NMC9313B Data Sheet, 1988.
National Semiconductor, NMC98C10 Data Sheet 1988.
Fujitsu Microelectronics Inc., MBM28C65 Data Sheet, Sep. 1987, Databook--1990.
Fujitsu Microelectronics Inc., MBM 28C256 Data Sheet, Apr. 1988, Databook--1990.
National Semiconductor, NMC48F512, Data Sheet 1988.

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