Non-volatile memory cell with two capacitors and one PNP...

Details Non-volatile memory cell with two capacitors and one PNP... Non-volatile memory cell with two capacitors and one PNP...

2011-04-05

2011-04-05

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29300, C438S201000

Reexamination Certificate

active

07919805

ABSTRACT:
In a non-volatile memory cell, a single poly SOI technology is used to save space and achieve low current programming by providing two capacitors formed in an n-material over an NBL, forming a inverter in an n-material over a PBL, and isolating the NBL from the PBL by means of a lightly doped region or a deep trench isolation region.

REFERENCES:
patent: 5227654 (1993-07-01), Momose et al.
patent: 6265752 (2001-07-01), Liu et al.
patent: 6429085 (2002-08-01), Pinter
patent: 6770951 (2004-08-01), Huang et al.
patent: 2002/0158273 (2002-10-01), Satoh et al.
patent: 2003/0198087 (2003-10-01), Kinsey et al.
patent: 2006/0023553 (2006-02-01), Takeyama et al.

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