Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2011-07-05
2011-07-05
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Systems using particular element
Resistive
C365S158000
Reexamination Certificate
active
07974117
ABSTRACT:
A non-volatile memory cell with a programmable unipolar switching element, and a method of programming the memory element are disclosed. In some embodiments, the memory cell comprises a programmable bipolar resistive sense memory element connected in series with a programmable unipolar resistive sense switching element. The memory element is programmed to a selected resistance state by application of a selected write current in a selected direction through the cell, wherein a first resistance level is programmed by passage of a write current in a first direction and wherein a second resistance level is programmed by passage of a write current in an opposing second direction. The switching element is programmed to a selected resistance level to facilitate access to the selected resistance state of the memory element.
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Amin Nurul
Jim Insik
Jung Chulmin
Kim Young-Pil
Sun Ming
Fellers , Snider, et al.
Ho Hoai V
Seagate Technology LLC
Tran Anthan T
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