Non-volatile memory cell with poly filled trench as control...

Details Non-volatile memory cell with poly filled trench as control... Non-volatile memory cell with poly filled trench as control...

2007-01-12

2010-02-16

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S348000, C257S505000, C257S510000, C257SE27112

Reexamination Certificate

active

07663173

ABSTRACT:
In a non-volatile memory cell, charge is stored in a fully isolated substrate or floating bulk that forms a storage capacitor with a first poly strip and includes a second poly strip defining a read gate and a poly-filled trench defining a control gate.

REFERENCES:
patent: 2002/0008273 (2002-01-01), Kumazaki
patent: 2005/0219912 (2005-10-01), Gendrier et al.

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