Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate
2007-01-23
2010-02-02
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Systems using particular element
Flip-flop
C365S207000, C365S196000, C365S189150, C365S218000
Reexamination Certificate
active
07656698
ABSTRACT:
A 4-transistor non-volatile memory (NVM) cell includes a static random access memory (SRAM) cell structure. The NVM cell utilizes a reverse Fowler-Nordheim tunneling programming technique that, in combination with the SRAM cell structure, allows an entire array to be programmed at one cycle. Equalize transistors are utilized to obtain more uniform voltage on the floating gates after an erase operation. Utilization of decoupling pas gates during a read operation results in more charge difference on floating gates of programmed and erased cells.
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Franklin Andrew J.
Lin Hengyang (James)
Lum Annie-Li-Keow
Poplevine Pavel
Dergosits & Noah LLP
Le Thong Q
National Semiconductor Corporation
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