Non-volatile memory cell with heating element

Details Non-volatile memory cell with heating element Non-volatile memory cell with heating element

2011-04-05

2011-04-05

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S324000

Reexamination Certificate

active

07919807

ABSTRACT:
The number of times that a non-volatile memory (NVM) can be programmed and erased is substantially increased by utilizing a localized heating element that anneals the oxide that is damaged by tunneling charge carriers when the NVM is programmed and erased. The program and erase voltages are also reduced when heat from the heating element is applied prior to programming and erasing.

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