Non-volatile memory cell with complementary resistive memory...

Details Non-volatile memory cell with complementary resistive memory... Non-volatile memory cell with complementary resistive memory...

2009-07-10

2011-10-25

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S158000, C365S163000, C365S171000, C365S173000

Reexamination Certificate

active

08045361

ABSTRACT:
A non-volatile memory cell and method of writing data thereto. In accordance with some embodiments, the memory cell includes first and second resistive memory elements (RMEs) configured to concurrently store complementary programmed resistive states. The first RME is programmed to a first resistive state and the second RME is concurrently programmed to a second resistive state by application of a common write current in a selected direction through the memory cell.

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David Tawei Wang, “Modern DRAM Memory Systems; Performance Analysis and Scheduling Algorithm,” Ph.D thesis, University of Maryland, 2005 pp. 1-40, US.

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