Non-volatile memory cell structure and process for forming same

Details Non-volatile memory cell structure and process for forming same Non-volatile memory cell structure and process for forming same

1993-07-19

1998-10-13

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257315, 257322, 36518528, H01L 29780

Patent

active

058215816

ABSTRACT:
A non-volatile split-gate memory cell 8 which can be programmed with only a five volt power supply and is fabricated using standard transistor processing methods, comprises a semiconductor substrate 10 with a source 12 and a drain 14 region separated by a channel region 16. A conductive floating gate 18 is formed over a portion 16a of the channel region 16 and separated by a FAMOS oxide 20. A conductive control gate 22 is formed over but electrically insulated from the floating gate 18 and over a second portion 16b of the channel region 16. The control gate 22 is separated from the second portion of the channel 16b by a pass oxide 26 which is thicker than the FAMOS oxide 20. Other embodiments and processes are also disclosed.

REFERENCES:
patent: 4317272 (1982-03-01), Kuo et al.
patent: 4373248 (1983-02-01), McElroy
patent: 4409723 (1983-10-01), Harari
patent: 4639893 (1987-01-01), Eitan
patent: 4750024 (1988-06-01), Schreck
patent: 4783766 (1988-11-01), Samachisa et al.
patent: 4794565 (1988-12-01), Wu et al.
A 5 Volt High Density Poly-Poly Erase Flash EPROM Cell; R. Kazerounian, S. Ali, Y. Ma, and B. Eitan; (IEDM, pp. 436-439), 1988.

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