Static information storage and retrieval – Read/write circuit – Including signal comparison
Reexamination Certificate
2005-05-17
2005-05-17
Phan, Trong (Department: 2818)
Static information storage and retrieval
Read/write circuit
Including signal comparison
C365S189090, C365S185200, C365S185210
Reexamination Certificate
active
06894934
ABSTRACT:
A sensing circuit for a memory cell includes a first bias current generator connected between a first voltage reference and a first inner circuit node, and a second reference current generator connected to the first voltage reference. A comparator having a first input terminal is connected to a comparison circuit node that is connected to the second reference current generator, a second input terminal is connected to a circuit node that is connected to the first inner circuit node, and an output terminal forms an output terminal of the sensing circuit. A cascode-configured bias circuit is connected between the inner circuit node and a matching circuit node. The cascode-configured bias circuit is also connected to a second voltage reference. A current/voltage conversion stage is connected to the matching circuit node, to the comparison circuit node, and to a third voltage reference.
REFERENCES:
patent: 5351212 (1994-09-01), Hashimoto
patent: 5699295 (1997-12-01), Yero
patent: 5729490 (1998-03-01), Calligaro et al.
patent: 6219277 (2001-04-01), Devin et al.
patent: 6219290 (2001-04-01), Chang et al.
patent: 6473340 (2002-10-01), Pasotti et al.
patent: 6711080 (2004-03-01), Kern et al.
patent: 6735120 (2004-05-01), Homma et al.
patent: 10102180 (2002-05-01), None
patent: 9012400 (1990-10-01), None
De Sandre Guido
De Santis Fabio
Pasotti Marco
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Jorgenson Lisa K.
Phan Trong
STMicroelectronics S.r.l.
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