Non-volatile memory cell programming method

Details Non-volatile memory cell programming method Non-volatile memory cell programming method

2011-03-15

2011-03-15

Hur, J. H. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S185240, C365S185030

Reexamination Certificate

active

07907452

ABSTRACT:
A non-volatile memory cell programming method of programming 2-bit data in a memory cell having 4 threshold voltage distributions may include a first program operation of programming a first bit of the 2-bit data in the memory cell by applying a first programming voltage to the memory cell; a second program operation of programming a second bit of the 2-bit data in the memory cell by applying a second programming voltage to the memory cell; and a stabilization operation of applying a stabilization voltage having an electric field opposite in polarity to an electric field formed by the first and second programming voltages to the memory cell after one of the first and second program operations that corresponds to a higher one of the first and second programming voltages is performed.

REFERENCES:
patent: 6744675 (2004-06-01), Zheng et al.
patent: 7042766 (2006-05-01), Wang et al.
patent: 2003/0103384 (2003-06-01), Takahashi
patent: 2007/0268749 (2007-11-01), Kim et al.

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