Non-volatile memory cell having floating gate electrode and redu

Details Non-volatile memory cell having floating gate electrode and redu Non-volatile memory cell having floating gate electrode and redu

1997-07-21

1998-12-29

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, H07L 29788

Patent

active

058545026

ABSTRACT:
A semiconductor non-volatile memory cell is structured so that a gate insulating film between a semiconductor substrate and a floating gate is formed thinner at its central portion with respect to the direction of channel width and thicker at its edges. As a result of this structure, fluctuations in the coupling ratio caused by a "bird's beak" portion are suppressed and variations in the writing and erasing characteristics are reduced.

REFERENCES:
patent: 5293331 (1994-03-01), Hart et al.
patent: 5371393 (1994-12-01), Chang et al.
patent: 5379253 (1995-01-01), Bergemont

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