Non-volatile memory cell fuse element

Details Non-volatile memory cell fuse element Non-volatile memory cell fuse element

1982-11-05

1985-10-08

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Bad bit

371 10, G11C 1140

Patent

active

045464545

ABSTRACT:
A non-volatile memory cell circuit is used to replace a polysilicon fuse as an enabling element for a redundant row or column of memory cells in a semiconductor memory array. The fuse is divided into read and program sections, allowing a large device to be used for reading and a small device to be used for programming, thus permitting programming of all fuses in a redundant row simultaneously with minimal current consumption. The circuit may be embodied as a five-device or a four-device configuration.

REFERENCES:
patent: 3753244 (1973-08-01), Sumilas et al.

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