Non-volatile memory cell for storage of a data item in an...

Static information storage and retrieval – Systems using particular element – Resistive

Reexamination Certificate

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C365S189090

Reexamination Certificate

active

07495945

ABSTRACT:
The present invention relates to a non-volatile memory cell for storage of a data item in an integrated circuit, comprising a resistive memory element which may have different conductance states depending on the stored data item, a memory unit for passing the stored data item to an integrated circuit, a read unit which can be activated in order to pass a data item on for storage in the memory unit as a function of the conductance state of the memory element, a control unit in order to activate the read unit so that the data item to be passed on is stored in the memory unit, and in order to deactivate the read unit after storage of the data item in the memory unit, such that the memory element is isolated from the memory unit.

REFERENCES:
patent: 6674679 (2004-01-01), Perner et al.
patent: 6728148 (2004-04-01), Yamauchi
patent: 6937509 (2005-08-01), Perner et al.
patent: 6958931 (2005-10-01), Yoon et al.
patent: 2004/0001351 (2004-01-01), Subramanian et al.
patent: 2004/0071013 (2004-04-01), Yoon et al.
patent: 2004/0257113 (2004-12-01), Toyoda et al.
patent: 2005/0122767 (2005-06-01), Perner et al.
patent: 2006/0050582 (2006-03-01), Perner

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