Non-volatile memory cell device, programming element and...

Details Non-volatile memory cell device, programming element and... Non-volatile memory cell device, programming element and...

2007-07-10

2007-07-10

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Including signal comparison

C365S185330, C365S185090

Reexamination Certificate

active

11179345

ABSTRACT:
A programming element for programming data into a plurality of non-volatile memory cells of a non-volatile memory cell array, the data being transferred to the non-volatile memory cell array in a data word comprising a plurality of data items. The programming element comprises a detection element for detecting at least a first data word and a second data word which are to be transferred to the non-volatile memory cell array, a determination element for determining the number of data items in the first data word and the second data word that need a change of the state of a respective non-volatile memory cell, a comparator element for comparing the determined number of data items with a maximum number of programmable data items using one programming pulse, a data word merge control element for merging the first data word with the second data word into a merged data word to be programmed into the non-volatile memory cell array if the determined number is less or equal to the maximum number, wherein the merged data word is to be programmed into the non-volatile memory cells together using the same at least one programming pulse.

REFERENCES:
patent: 5430674 (1995-07-01), Javanifard
patent: 5557668 (1996-09-01), Brady
patent: 5872794 (1999-02-01), Cook et al.
patent: 5970005 (1999-10-01), Yin et al.
patent: 6418506 (2002-07-01), Pashley et al.
patent: 6826663 (2004-11-01), Perego et al.
patent: 2004/0090825 (2004-06-01), Nam et al.
patent: 2004/0193774 (2004-09-01), Nyata et al.

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