Static information storage and retrieval – Floating gate – Particular biasing
Patent
1997-11-03
1999-03-23
Dinh, Son T.
Static information storage and retrieval
Floating gate
Particular biasing
36518528, 36518529, G11C 1134
Patent
active
058869280
ABSTRACT:
The programming time of a non-volatile memory cell (13) is reduced by forming the non-volatile memory cell (13) in a well region (12). The presence of the well region (12) increases the number of electrons that are present in a channel region (14) of the non-volatile memory cell (13). The number of electrons in the channel region (14) is also increased by placing a voltage potential on the well region (12) relative to a source region (15). The voltage differential will inject electrons into the well region (12), which increases the number of electrons in the channel region (14).
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Makwana Jitendra J.
Monteilh Darryl F.
Omon Effiong A.
Collopy Daniel R.
Dinh Son T.
Motorola Inc.
Seddon Kenneth M.
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