Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2006-01-24
2006-01-24
Le, Thong Q. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S065000
Reexamination Certificate
active
06990006
ABSTRACT:
A non-volatile memory cell comprising a latch circuit (1) which comprises a first node (6) and a second node (7) and latches complementary data set in the first node (6) and the second node (7), a first switching element (4) which connects the first node (6) and a first data input/output line (2), a second switching element (5) which connects the second node (7) and a second data input/output line (3), a first ferroelectric capacitor (8a) which connects the second data input/output line (3) and the first node (6), and a second ferroelectric capacitor (8b) which connects the first data input/output line (2) and the second node (7).
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Ohtsuka Takashi
Toyoda Kenji
Le Thong Q.
Matsushita Electric Industrial Co. LTD
McDermott Will & Emery LLP
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