Non-volatile memory cell

Details Non-volatile memory cell Non-volatile memory cell

2011-01-25

2011-01-25

Lee, Calvin (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S261000

Reexamination Certificate

active

07875926

ABSTRACT:
A super-silicon-rich oxide (SSRO) non-volatile memory cell includes a gate conductive layer on a substrate, a source/drain in the substrate at respective sides of the gate conductive layer, a tunneling dielectric layer between the gate conductive layer and the substrate, a SSRO layer serving as a charge trapping layer between the gate conductive layer and the tunneling dielectric layer, and an upper-dielectric layer between the gate conductive layer and the SSRO layer.

REFERENCES:
patent: 6858906 (2005-02-01), Lee et al.
patent: 7749838 (2010-07-01), Lu et al.
patent: 2006/0071301 (2006-04-01), Luo et al.
patent: 2006/0246661 (2006-11-01), Joo et al.
patent: I253169 (2006-04-01), None
Chinese Examination Report of Taiwan Application No. 096121488, dated on Sep. 6, 2010.

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