Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2011-02-08
2011-02-08
Hur, J. H. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S189160, C365S171000, C365S173000, C365S148000
Reexamination Certificate
active
07885097
ABSTRACT:
In accordance with various embodiments, a column of non-volatile memory cells is connected between opposing first and second control lines. A fixed reference voltage is applied to the second control line. The memory cells are simultaneously programmed to a first resistive state by applying a first voltage to the first control line that is greater than the fixed reference voltage. Less than all of the memory cells are subsequently simultaneously programmed to a different, second resistive state by applying a second voltage to the first control line that is less than the fixed reference voltage, so that at the conclusion of the respective programming steps a first portion of the memory cells along said column are at the first resistive state and a second portion of the memory cells along said column are at the second resistive state.
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Carter Andrew John
Li Hai
Lu Yong
Reed Daniel S.
Fellers , Snider, et al.
Hur J. H.
Seagate Technology LLC
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