Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-17
2007-07-17
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000, C257S390000, C257SE27081
Reexamination Certificate
active
11164174
ABSTRACT:
A non-volatile memory array including memory units which are arranged in a row/column array is provided. Source lines are arranged in parallel in the column direction and connect to the source regions of the memory units in the same column. Bit lines are arranged in parallel in the row direction and connect to the drain regions of the memory units in the same row. Word lines are arranged in parallel in the column direction and connect to the select gates of the memory units in the same column. Control lines are arranged in parallel in the column direction and connect to the control gates of the memory units in the same column. The control lines are grouped into several groups with n control lines (n is a positive integer not less than 2) in one group, and the control lines in each group are electrically connected to each other.
REFERENCES:
patent: 5710072 (1998-01-01), Krautschneider et al.
patent: 6392636 (2002-05-01), Ferrari et al.
patent: 6812574 (2004-11-01), Tomita et al.
patent: 6884588 (2005-04-01), Rastogi et al.
patent: 2006/0197145 (2006-09-01), Pittikoun et al.
Huang Jie-Hau
Lin Ching-Yuan
e-Memory Technology, Inc.
Jianq Chyun IP Office
Quach T. N.
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