Non-volatile memory and semiconductor device

Details Non-volatile memory and semiconductor device Non-volatile memory and semiconductor device

2005-05-16

2009-02-24

Wojciechowicz, Edward (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S347000, C257S350000, C257S052000, C257S083000, C257S088000

Reexamination Certificate

active

07495278

ABSTRACT:
A non-volatile memory comprising a semiconductor active layer provided on an insulating substrate, an insulating film provided on the. semiconductor active layer, a floating gate electrode provided on the insulating film, an anodic oxidized film obtained by anodic oxidation of the floating gate electrode, and a control gate electrode provided in contact with the anodic oxidized film, and a semiconductor device, particularly a liquid crystal display device comprising the non-volatile memory.

REFERENCES:
patent: 4065781 (1977-12-01), Gutknecht
patent: 4394688 (1983-07-01), Lida et al.
patent: 5027175 (1991-06-01), Iwasa
patent: 5191551 (1993-03-01), Inoue
patent: 5260797 (1993-11-01), Muraji et al.
patent: 5317236 (1994-05-01), Zavracky et al.
patent: 5452019 (1995-09-01), Fukuda et al.
patent: 5469365 (1995-11-01), Diekema et al.
patent: 5481317 (1996-01-01), Hieda
patent: 5539459 (1996-07-01), Bullitt et al.
patent: 5541138 (1996-07-01), Yamazaki et al.
patent: 5568421 (1996-10-01), Aritome
patent: 5569615 (1996-10-01), Yamazaki et al.
patent: 5642295 (1997-06-01), Smayling
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5648277 (1997-07-01), Zhang et al.
patent: 5666159 (1997-09-01), Parulski et al.
patent: 5677204 (1997-10-01), Imai et al.
patent: 5705829 (1998-01-01), Miyanaga et al.
patent: 5789292 (1998-08-01), Yamazaki et al.
patent: 5793344 (1998-08-01), Koyama
patent: 5809520 (1998-09-01), Edwards et al.
patent: 5895935 (1999-04-01), Yamazaki et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5926562 (1999-07-01), Hyodo et al.
patent: 5933199 (1999-08-01), Yoon
patent: 5965915 (1999-10-01), Yamazaki et al.
patent: 5982427 (1999-11-01), Hunt et al.
patent: 5982462 (1999-11-01), Nakano et al.
patent: 6004847 (1999-12-01), Clementi et al.
patent: 6232136 (2001-05-01), Zavracky et al.
patent: 6323515 (2001-11-01), Yamazaki et al.
patent: 6335716 (2002-01-01), Yamazaki et al.
patent: 6424008 (2002-07-01), Yamazaki et al.
patent: 6433382 (2002-08-01), Orlowski et al.
patent: 6472684 (2002-10-01), Yamazaki et al.
patent: 6597034 (2003-07-01), Yamazaki et al.
patent: 6627953 (2003-09-01), Vu et al.
patent: 6670635 (2003-12-01), Yamazaki et al.
patent: 6686623 (2004-02-01), Yamazaki
patent: 6900499 (2005-05-01), Yamazaki et al.
patent: 7067403 (2006-06-01), Yamazaki et al.
patent: 7126156 (2006-10-01), Yamazaki et al.
patent: 2003/0025156 (2003-02-01), Yamazaki et al.
patent: 2004/0104424 (2004-06-01), Yamazaki
patent: 2005/0181562 (2005-08-01), Yamazaki et al.
patent: 2007/0034873 (2007-02-01), Yamazaki et al.
patent: 0 488 804 (1992-06-01), None
patent: 2-63163 (1990-03-01), None
patent: 2-65276 (1990-03-01), None
patent: 5-36989 (1993-02-01), None
patent: 6-151344 (1994-05-01), None
patent: 7-86532 (1995-03-01), None
patent: 07-130652 (1995-05-01), None
patent: 07-135318 (1995-05-01), None
patent: 07-321339 (1995-12-01), None
patent: 08-078329 (1996-03-01), None
patent: 10-294280 (1998-11-01), None
patent: 11-345767 (1999-12-01), None
patent: 11-354442 (1999-12-01), None
Shimokawa, R. et al, “Characterization of High-Efficiency Cast-Si Solar Cell Wafers by MBIC Measurement,” Japanese Journal of Applied Physics, vol. 27, No. 5, pp. 751-758, May 1988.
U.S. Appl. No. 09/144,538 (pending) to Yamazaki et al, including specification, claims, abstract and drawings.
McGraw-Hill Dictionary of Scientific and Technical Terms, 5thedition, p. 1622, (definition of “quartz”) and p. 1826 (definition of “silicon-on-insulator”).

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