Non-volatile memory and method for manufacturing...

Details Non-volatile memory and method for manufacturing... Non-volatile memory and method for manufacturing...

2006-03-21

2006-03-21

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S257000, C365S185010

Reexamination Certificate

active

07015538

ABSTRACT:
A coupling oxide film is formed on a silicon substrate, a polysilicon film is further formed thereupon, and a low-temperature oxide film is deposited to a thickness of 10 nm, for example. Next, a silicon nitride film is formed on this low-temperature oxide film, and selectively removed by dry etching. At this time, the low-temperature oxide film serves as an etching stopper film, so the low-temperature oxide film and polysilicon film are not over-etched. Subsequently, the polysilicon film is dry-etched, forming a recess. A floating gate is then formed of the polysilicon film.

REFERENCES:
patent: 6429075 (2002-08-01), Yeh et al.
Rebecca Mih, et al., “0.18um Modular Triple Self-Aligned Embedded Split-Gate Flash Memory”,2000 Symposium on VLSI Technology Digest of Technical Papers, pp 120-121.

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