Non-volatile memory and fabricating method thereof

Details Non-volatile memory and fabricating method thereof Non-volatile memory and fabricating method thereof

2007-05-08

2007-05-08

Chaudhari, Chandra (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29309

Reexamination Certificate

active

10904703

ABSTRACT:
A method of fabricating a non-volatile memory is provided. A plurality of stack gate strips is formed on a substrate and a plurality of source/drain regions is formed in the substrate beside the stack gate strips. A plurality of dielectric strips is formed on the source/drain regions. A plurality of word lines is formed on the stack gate strips and the dielectric strips. Thereafter, the stack gate strips exposed by the word lines are removed to form a plurality of openings. A plurality of spacers is formed on the sidewalls of the openings and the word lines. A dielectric layer is formed over the substrate. A plurality of contacts is formed in the dielectric layer and the dielectric strips between two adjacent word lines.

REFERENCES:
patent: 6627946 (2003-09-01), Wang
patent: 2002/0000592 (2002-01-01), Fujiwara
patent: 2003/0001196 (2003-01-01), Choi et al.

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