Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-10
2010-12-28
Nguyen, Khiem D (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S316000, C257SE21179, C257SE21422, C438S201000, C438S591000
Reexamination Certificate
active
07859040
ABSTRACT:
Non-volatile memory is described. The non-volatile memory includes a substrate having a source region, a drain region and a channel region. The channel region separates the source region and the drain region. An electrically insulating layer is adjacent to the source region, drain region and channel region. A floating gate electrode is adjacent to the electrically insulating layer. The electrically insulating layer separates the floating gate electrode from the channel region. The floating gate electrode has a floating gate major surface. A control gate electrode has a control gate major surface and the control gate major surface opposes the floating gate major surface. A vacuum layer or gas layer at least partially separates the control gate major surface from the floating gate major surface.
REFERENCES:
patent: 6912158 (2005-06-01), Forbes
patent: 7579646 (2009-08-01), Wang et al.
patent: 2003/0042531 (2003-03-01), Lee
patent: 2006/0001073 (2006-01-01), Chen
patent: 2006/0051920 (2006-03-01), Yamaguchi et al.
NN9111238 “Vacuum Sealed Silicon Rich Oxide EEPROM Cell”, IBM Technical Disclosure Bulletin, Nov. 1991.
Singh et al., Enhanced Cold Field Emission from <100> Oriented B-W Nanoemitters, J. Vac. Sci. Technolo. B 22(3), May/Jun. 2004.
Geis, et al., Electron Field Emission from Diamond and Other Carbon Materials After H2, O2, and Cs Treatment, Appl. Phys. Lett. 67 (9), Aug. 28, 1995.
Lisovskiy, et al., Low-Pressure Gas Breakdown in Uniform DC Electric Field, J. Phys. D: Appl. Phys. 33 (2000) 2722-2730.
Nguyen Khiem D
Seagate Technology LLC
Whipps Campbell Nelson
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