Non-volatile memory

Details Non-volatile memory Non-volatile memory

2006-04-20

2008-11-04

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S321000

Reexamination Certificate

active

07446370

ABSTRACT:
A non-volatile memory is provided, including a substrate, a control gate, a floating gate, and a select gate. A source region and a drain region are disposed in the substrate. The control gate is disposed on the substrate between the source region and the drain region. The floating gate is disposed between the control gate and the substrate. The cross-section of the floating gate presents, for example, an L-shape and the floating gate includes a central region which is perpendicular to the substrate and a lateral region which is parallel to the substrate. The central region is adjacent to the source region. The select gate is disposed on the sidewall of the control gate and the lateral region of the floating gate, and is adjacent to the drain region. Besides, the present invention further includes a method of manufacturing the above non-volatile memory.

REFERENCES:
patent: 5793080 (1998-08-01), Hwang
patent: 6140182 (2000-10-01), Chen
patent: 6291297 (2001-09-01), Chen
patent: 6313498 (2001-11-01), Chen
patent: 6747310 (2004-06-01), Fan et al.
patent: 7202130 (2007-04-01), Liu et al.

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