Non-volatile memory

Details Non-volatile memory Non-volatile memory

2008-03-25

2008-03-25

Tran, Minhloan (Department: 2826)

Static information storage and retrieval

Systems using particular element

Semiconductive

C257S910000, C257S191000, C257SE29330, C257SE29170

Reexamination Certificate

active

11656934

ABSTRACT:
A non-volatile memory cell includes an upper electrode; a lower electrode and a state-variable region, in which a conductive state changes only once. The state variable region is formed in a region between the upper electrode and the lower electrode. The state-variable region comprises a first semiconductor layer of a first conductive type; and second semiconductor layers of a second conductive type, opposing to the first conductive type, which are formed on upper and lower surfaces of the first semiconductor layer via PN junctions.

REFERENCES:
patent: 6034882 (2000-03-01), Johnson et al.
patent: 7071533 (2006-07-01), Kimber et al.
patent: 2004/0245522 (2004-12-01), VanBuskirk et al.
patent: 2006/0073642 (2006-04-01), Yeh et al.
patent: 2006/0199361 (2006-09-01), Ho et al.
patent: WO-00/30118 (2000-05-01), None

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