Non-volatile memory

Static information storage and retrieval – Systems using particular element – Semiconductive

Reexamination Certificate

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Details

C365S148000, C365S175000

Reexamination Certificate

active

07027327

ABSTRACT:
A nonvolatile memory includes at least a first electrode (71) and a second electrode (72) provided on a substrate, the first and second electrodes being separated from each other, and a conductive organic thin film (73) for electrically connecting the first and second electrodes. The conductive organic thin film (73) has a first electric state in which it exhibits a first resistance, and a second electric state in which it exhibits a second resistance. A first threshold voltage for a transition from the first electric state to the second electric state, and a second threshold voltage for a transition from the second electric state to the first electric state are different from each other, and either the first electric state or the second electric state is maintained a voltage in a range between the first threshold voltage and the second threshold voltage.

REFERENCES:
patent: 5418743 (1995-05-01), Tomioka et al.
patent: 5621683 (1997-04-01), Young
patent: 0 528 662 (1993-02-01), None
patent: 2-58240 (1990-02-01), None
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patent: 3-289169 (1991-12-01), None
patent: 5-28549 (1993-02-01), None
patent: 01/73845 (2001-10-01), None

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