Non-volatile magnetic random access memory

Details Non-volatile magnetic random access memory Non-volatile magnetic random access memory

1992-06-29

1994-02-22

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Hall effect

365173, 365 87, G11C 1118

Patent

active

052894100

ABSTRACT:
Improvements are made in a non-volatile magnetic random access memory. Such a memory is comprised of an array of unit cells, each having a Hall-effect sensor and a thin-film magnetic element made of material having an in-plane, uniaxial anisotropy and in-plane, bipolar remanent magnetization states. The Hall-effect sensor is made more sensitive by using a 1 m thick molecular beam epitaxy grown InAs layer on a silicon substrate by employing a GaAs/AlGaAs/InAlAs superlattice buffering layer. One improvement avoids current shunting problems of matrix architecture. Another improvement reduces the required magnetizing current for the micromagnets. Another improvement relates to the use of GaAs technology wherein high electron-mobility GaAs MESFETs provide faster switching times. Still another improvement relates to a method for configuring the invention as a three-dimensional random access memory.

REFERENCES:
patent: 3696349 (1972-10-01), Kaske et al.
patent: 4087582 (1978-05-01), Shitahata et al.
patent: 5089991 (1992-02-01), Matthews
patent: 5099309 (1992-03-01), Kryzaniwsky
patent: 5103424 (1992-04-01), Wade

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