Non-volatile magnetic memory cell and devices

Details Non-volatile magnetic memory cell and devices Non-volatile magnetic memory cell and devices

1998-08-05

2000-03-07

Nguyen, Tan T.

Static information storage and retrieval

Systems using particular element

Magnetic thin film

365173, G11C 1300

Patent

active

060348879

ABSTRACT:
A magnetic tunneling junction cell for use in memory and logic switching applications is formed with a first ferromagnetic layer, a second ferromagnetic layer, and an insulating layer interposed between said first and second ferromagnetic layers to form a magnetic tunnel junction element. The cell further includes a write conductor which has a first conductor segment aligned in a first direction and located proximate to the first ferromagnetic layer and a second conductor segment aligned in a second direction, substantially orthogonal to the first direction and located proximate to the second ferromagnetic layer. The write conductor is terminated by a capacitive structure which allows a bidirectional current to be established in the write conductor using a monopolar write voltage and only a single port write terminal. The bidirectional current writes a high impedance state into the cell in a first current direction and a low impedance state into the cell in a second current direction. Preferably, the first and second ferromagnetic layers are formed with a half-metallic ferromagnetic material which features near total spin polarization, resulting in a cell having near ideal switching characteristics. Such a cell is suitable for switching devices, logic devices and non-volatile memory devices.

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