Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2005-01-18
2005-01-18
Lam, David (Department: 2818)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S185240, C365S177000
Reexamination Certificate
active
06845032
ABSTRACT:
Non-volatile latch circuit10of the present invention comprises ferroelectric capacitor1provided with a first electrode1a, second electrode1b, and ferroelectric film1cthat lies between these electrodes; reset terminal Tre that is connected to first electrode1aand a CMOS inverter element2that is connected to second electrode1bof ferroelectric capacitor1; voltage switching terminal Tpl that applies a voltage to second electrode1b; switching element5that is connected between second electrode1band second input terminal Tpl and switches a voltage applied to second electrode1b; and set terminal Tse that applies a voltage for switching on or off switching element5, wherein the voltage generated in second electrode1bcaused by polarization retained by ferroelectric film1cis higher than the threshold voltage Vtn of NMISFET4of CMOS inverter element2.
REFERENCES:
patent: 6233169 (2001-05-01), Nishimura
patent: 6314016 (2001-11-01), Takasu
patent: P2000-124776 (2000-04-01), None
patent: P2000-293989 (2000-10-01), None
patent: P2001-283584 (2001-10-01), None
Morimoto Kiyoshi
Ohtsuka Takashi
Toyoda Kenji
Lam David
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
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